Not affiliated with EPC, although I've been super impressed by their GaNs since first using them in lidars nearly a decade ago now. I've been keeping an eye on their integrated circuits (GaN + drivers), and just noticed today that this has moved from ENG to PROD. A super interesting part to me; a real compromise on FET resistance since clearly a lot of die area is going towards the driver, but the ability to directly drive a 5 mΩ half-bridge from a µC PWM pin without worrying about protecting the gate, gate drive current, etc, seems like a big deal...
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