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Well I guess we know what happened to those failed chips from Curiousmarc's broken DRO.

Maybe I missed it, but what actually makes it wear out? And why does it last so much longer than flash/eeprom?



There are multiple factors that limit the number of writes that FRAMs can handle: changes in crystal structure as Ti ions replace O, mobile ions collecting at grain boundaries, and something to do with 90º domains.




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