The Nano Letters abstract, linked by the TR piece, at http://pubs.acs.org/doi/abs/10.1021/nl203701g , has good enough pictures, including a voltage-current plot. That plot seems to demonstrate useful switching (1 nA to 10 uA within 1V).
The abstract's pictures of the structure do a much better job than the TR 'conceptual illustration', which is headed "Nano gate" when the tube really is the transistor channel. The controlling gate, according to the abstract, is buried underneath (not above the channel, as usual in all-Si processes).
The abstract's pictures of the structure do a much better job than the TR 'conceptual illustration', which is headed "Nano gate" when the tube really is the transistor channel. The controlling gate, according to the abstract, is buried underneath (not above the channel, as usual in all-Si processes).