The step from 14 to 10 nm is huge. Both from a technological perspective on the manufacturing side as well as on the effect it will have to the number of transistors on a die and the power consumption of those transistors. Remember that power consumption and the number of transistors are related to the surface area so there is a square factor in there. 14 nm ^2 = 196, 10 nm ^2 = 100, so that's almost a doubling of the number of transistors and approximately a halving of the power required per transistor for a given die area.
Okay, so the node names are effectively useless at this point. They used to refer to gate length, but no longer, even for Intel. Oh, and Intel's 10nm will actually have lower performance than their 14nm.
Besides, it matters not, the bottlenecks today are in memory and interconnects.
You will see stacked memory and silicon interposers, but you won't see main memory on the CPU die. DRAM is based on an array of what is called "trench capacitors." The fabrication process is sufficiently different that they don't even make these in the same facility, much less on the same die process. An array of trench capacitors will always be smaller than transistor based memory (SRAM.)
It is not a big problem to make DRAM on pretty much every SOI process, just power consumption and refresh rates will have to be quite big.
The problem with MRAM is unreliable reads, they are excellent for low clock speed devices, but as you go into gigahertz range, signal quality of an mram cell begins to degrade, and you have to put a darlington on top of it, or a bicmos transistor, thus negating its cell size advantage
For DRAM are you talking about standard deep tech capacitor dram or FBRAM?
Agree with MRAM, but it is also a very immature technology, so there's hope at least. unless you're talking about crossbar crosstalk which can be solved with a diode.
I believe that data published by people peddling embedded dram ip is their "best case scenario" with still significant alteration to manufacturing process
Sure, I never meant to imply that previous process steps were much smaller, just that this one is still formidable in its own right. Real world gains will not be 100% but they're a very large fraction of that. Obviously any technological advance in a mature industry is going to show reduced return on investment at some point, it's rather surprising that the ROI on these process shrinks is still worth it given that we are now well beyond what was thought to be possible not all that long ago.
Yeah, so the node names now apparently refer to the "smallest feature size", which is some random thing on the M0 metal layer. Source - from a former Intel engineer for more than a decade
So not like when games consoles used to advertise how many "bits" they had: take whatever has the widest bus and advertise that as the number of "bits" or use tricks like the Atari Jaguar: 2x 32bit cpu's = 64bit, right? RIGHT?