"Introduced in October 1970, the 1103 was the first commercially available DRAM IC..."
Capacity: 1 Kilobit (128 bytes)
Package: 18 Pin DIP
"Technical Details:
tRWC 580 ns Random read or write cycle time (from one +ve Precharge edge to the next)
tPO 300 ns Access time: Precharge High to valid data out
tREF 2 ms Refresh time
VCC 16 V Supply voltage
p-MOS 8 μm[8] Production process (silicon gate MOSFET)
Capacity 1024x1 Capacity x bus width"
"Introduced in October 1970, the 1103 was the first commercially available DRAM IC..."
Capacity: 1 Kilobit (128 bytes)
Package: 18 Pin DIP
"Technical Details:
tRWC 580 ns Random read or write cycle time (from one +ve Precharge edge to the next)
tPO 300 ns Access time: Precharge High to valid data out
tREF 2 ms Refresh time
VCC 16 V Supply voltage
p-MOS 8 μm[8] Production process (silicon gate MOSFET)
Capacity 1024x1 Capacity x bus width"