Also, there are 8-pin FRAM chips with the same pinouts as generic QSPI Flash/RAM/etc chips which you can buy today.
Again, it's still low-density and expensive, but that seems to be improving and it's fun to make applications which can re-write nonvolatile data by word rather than by page.
If you're writing to flash or FeRAM that much it seems to me that You're Doing It Wrong.
The worst I do to mine is to log sensor data in absence of wifi, that's in the order of bits/minute.
TI's spec for 10^10 endurance is for random writes
There are no oxides in the supporting circuitry? [Do you have a link to rad-hard results?]
BTW according to TI's support forum, the MSP430F chips with FRAM are not rated to withstand the high levels of gamma radiation used in medical sterilization.
However, Maxim does have many parts rated for that type of application, with "non-floating gate" NV memories. (Draw your own conclusions about what they are referring to.)
Edit: And of course there are oxides, but you can margin around the assymetric Vt-shift that occurs in the transistors.
Edit 2: At least one part explicitly states in the data sheet that it uses FRAM.
This sound impressive until you get to the part where reads are destructive, and reads heavily outweigh writes in most workloads. Sounds like a pretty significant disadvantage.